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PD - 94414A
SMPS MOSFET
IRFP22N60K
HEXFET(R) Power MOSFET
Applications VDSS RDS(on) typ. l Hard Switching Primary or PFS Switch 600V 240m l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Enhanced Body Diode dv/dt Capability Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case )
ID
22A
TO-247AC
Max.
22 14 88 370 2.9 30 18 -55 to + 150 300
Units
A W W/C V V/ns
C
Avalanche Characteristics
Symbol
EAS IAR EAR
Parameter
Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
380 22 37
Units
mJ A mJ
Thermal Resistance
Symbol
RJC RCS RJA
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.24 ---
Max.
0.34 --- 40
Units
C/W
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8/26/04
IRFP22N60K
Static @ TJ = 25C (unless otherwise specified)
Symbol V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. 600 --- --- 3.0 --- --- --- ---
Typ. --- 0.30 240 --- --- --- --- ---
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 280 m VGS = 10V, ID = 13A 5.0 V VDS = VGS, ID = 250A 50 A VDS = 600V, VGS = 0V 250 A VDS = 480V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Max. Units Conditions --- S VDS = 50V, ID = 13A 150 ID = 22A 45 nC VDS = 480V 76 VGS = 10V --- VDD = 300V --- ID = 22A ns --- RG = 6.2 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 480V, = 1.0MHz --- VGS = 0V, VDS = 0V to 480V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Symbol IS
ISM
Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time
Min. 11 --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- --- --- --- 26 99 48 37 3570 350 36 4710 92 180
Diode Characteristics
Min. Typ. Max. Units Conditions D --- --- 22 MOSFET symbol showing the A G --- --- 88 integral reverse S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 22A, VGS = 0V IF = 22A --- 590 890 TJ = 25C ns --- 670 1010 TJ = 125C di/dt = 100A/s --- 7.2 11 TJ = 25C C --- 8.5 13 TJ = 125C --- 26 39 A TJ = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VSD trr Qrr IRRM ton Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Starting TJ = 25C, L = 1.5mH, RG = 25,
IAS = 22A ISD 22A, di/dt 540 A/s, VDD V(BR)DSS, TJ 150C.
R is measured at TJ approximately 90C
2
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IRFP22N60K
100
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
100
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
10
1
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
0.1
5.0V
1
5.0V
0.01
20s PULSE WIDTH Tj = 25C
0.001 0.1 1 10 100
20s PULSE WIDTH Tj = 150C
0.1 0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.00
3.0
I D = 22A
ID, Drain-to-Source Current (A)
T J = 150C
RDS(on) , Drain-to-Source On Resistance
2.5
10.00
2.0
1.00
(Normalized)
1.5
T J = 25C
1.0
0.10
0.01 5.0 6.0 7.0
VDS = 50V 20s PULSE WIDTH
8.0 9.0 10.0
0.5
V GS = 10V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ, Junction Temperature
( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFP22N60K
100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED Crss Coss =C gd =C +C ds gd
20 ID= 22A
VGS , Gate-to-Source Voltage (V)
16
10000
VDS= 480V VDS= 300V VDS= 120V
C, Capacitance (pF)
Ciss
1000
12
8
Coss
100
4
Crss
0
10 1 10 100 1000
0
40
80
120
160
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100.0
1000 OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
10.0
T J = 150C
100
10
100sec
1.0 T J = 25C
1msec 1 Tc = 25C Tj = 150C Single Pulse 1 10 100 10msec
0.1 0.2 0.4 0.6 0.8 1.0
VGS = 0V 1.2 1.4
0.1
1000
10000
VSD, Source-toDrain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFP22N60K
25
V DS VGS
RD
20
RG VGS
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
-VDD
ID , Drain Current (A)
15
10
Fig 10a. Switching Time Test Circuit
5
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature
( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
(Z thJC )
D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T t1/ t 2 +T C 1
Thermal Response
J = P DM x Z thJC
0.001 0.00001
0.0001
0.001
0.01
0.1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFP22N60K
800
ID TOP BOTTOM 9.8A 14A 22A
15V
EAS , Single Pulse Avalanche Energy (mJ)
600
VDS
400
L
DRIVER
RG
20V
D.U.T
IAS
+ V - DD
A
200
tp
0.01
Fig 12c. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
Starting T , J Junction Temperature
( C)
Fig 12a. Maximum Avalanche Energy Vs. Drain Current
tp
V(BR)DSS
I AS
Fig 12d. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K 12V .2F .3F
QG
VGS
D.U.T. + V - DS
QGS VG
QGD
VGS
3mA
IG
ID
Current Sampling Resistors
Charge
Fig 13a. Gate Charge Test Circuit
Fig 13b. Basic Gate Charge Waveform
6
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IRFP22N60K
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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IRFP22N60K
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: T HIS IS AN IRFPE30 WIT H ASS EMBLY LOT CODE 5657 AS S EMBLED ON WW 35, 2000 IN THE ASS EMBLY LINE "H"
Note: "P" in assembly line position indicates "Lead-Free"
PART NUMBER INTERNAT IONAL RECTIFIER LOGO ASS EMBLY LOT CODE
IRFPE30
56 035H 57
DATE CODE YEAR 0 = 2000 WEEK 35 LINE H
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/04
8
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